摘要
We report the Hall effect measured in gold films evaporated onto mica substrates, the samples having an average grain diameter D that ranges between 12 and 174 nm, and a thickness t of approximately 50 nm and 100 nm. The Hall mobility was determined at low temperatures T (4 K %26lt;= T %26lt;= 50 K). By tuning the grain size during sample preparation, we discriminate whether the dominant collision mechanism controlling the resistivity of the samples at 4 K is electron-surface or electron-grain boundary scattering, based upon whether the Hall mobility depends linearly on film thickness t or on grain diameter D.
- 出版日期2013-2-4