A miniature coupled-line-based 3-dB directional coupler using GaAs PHEMT process

作者：Chen Chih Chiang^*; Sim Chow Yen Desmond; Ho Sao An

来源：International Journal of RF and Microwave Computer-Aided Engineering, 2016, 26(1): 21-26.

DOI：10.1002/mmce.20924

• gallium-arsenide
• coupled-line
• directional coupler
• complementary-conducting-strip

A novel complementary-conducting-strip (CCS) coupled-line (CL) design is proposed to achieve compact size by applying two-dimensional layout and standard gallium-arsenide (GaAs) thin-film technology. To obtain high coupling and satisfy the design rules of GaAs process, mixed-couple mechanism with edge and broadside coupling are also used. A CCS CL-based Ka-band 3-dB directional coupler is fabricated using WIN 0.15-m GaAs pseudomorphic high electron mobility transistor technology. Experimental results show that the proposed directional coupler can cover the entire Ka-band (26-40 GHz) with through and coupling of approximately 3.7 +/- 0.25 dB, and isolation of better than 13 dB. In addition, the phase difference between the two output ports is approximately 90 degrees +/- 5 degrees. The occupied area of the prototype (without I/O networks) is only 220 x 220 m(2).

• 出版日期2016-1