Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

作者：Gajula D R^*; McNeill D W; Coss B E; Dong H; Jandhyala S; Kim J; Wallace R M; Armstrong B M

来源：Applied Physics Letters, 2012, 100(19): 192101.

DOI：10.1063/1.4712564

In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300 degrees C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is similar to 300 degrees C, where the nickel mono-germanide phase is formed but without phase agglomeration.

• 出版日期2012-5-7