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摘要
Since 1980, the properties and applications of the thin thermally nitrided silicon oxide (SiOxNy) films have widely been studied. But so far, the current transport mechanism in the films, however, is still not understood thoroughly. Recently, Suzuki (1986) and Cheng et al (1988) have established models, respectively. In their models, the theoretical result agrees well with the experiment when the external field is less than 9 MV cm-1. But a larger deviation is found for the external field greater than 9 MV cm-1 and the error will increase for a further field increase. In this work, we have analyzed the current transport behavior in the thin SiOxNy films fabricated by the conventional and rapid thermal processing and compared it with the thin silicon dioxide. Based on the experimental data and the physical factors a new model is proposed to explain the current transport behavior in the thin SiOxNy films, particularly, for over external applied high field until just before the intrinsic breakdown. The model suggested that four mechanisms exist for the current transport in this film: (1) direct injection of electrons with a higher energy from the cathode to the conduction band (Ja); (2) electrons captured by the electron trap in the film (Jb); (3) re-emission of the trapped electrons (Jc); (4) hole injection from the Si-substrate (Jd). The theoretical result of the new model agrees well with the experiment. The significant current enhancement at low field and obvious trapping ledge-effect at high field for the I-V characteristics of the films can be explained satisfactorily by the new model.
- 出版日期1991
- 单位华南理工大学
