Scanning Auger microscopy for high lateral and depth elemental sensitivity

作者：Martinez E^*; Yadav P; Bouttemy M; Renault O; Borowik L; Bertin F; Etcheberry A; Chabli A

来源：Journal of Electron Spectroscopy and Related Phenomena, 2013, 191: 86-91.

DOI：10.1016/j.elspec.2013.11.008

• AES
• SAM
• Auger depth profiling
• High spatial elemental resolution
• High depth elemental resolution
• Nanostructures

Scanning Auger microscopy is currently gaining interest for investigating nanostructures or thin multi-layers stacks developed for nanotechnologies. New generation Auger nanoprobes combine high lateral (similar to 10 nm), energy (0.1%) and depth (similar to 2 nm) resolutions thus offering the possibility to analyze the elemental composition as well as the chemical state, at the nanometre scale. We report here on the performances and limitations on practical examples from nanotechnology research. The spatial elemental sensitivity is illustrated with the analysis of Al0.7Ga0.3As/GaAs heterostructures, Si nanowires and SiC nanodots. Regarding the elemental in-depth composition, two effective approaches are presented: low energy depth profiling to reveal ultra-thin layers (similar to 1 nm) and analysis of cross-sectional samples.

• 出版日期2013-12
• 单位中国地震局