科研之友
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摘要
On the basis of the itinerant 4f electron model, the electronic structure for YbSn3 is calculated by a relativistic linear augmented-plane-wave method with the exchange-correlation potential in the local density approximation. The Fermi surfaces are constructed from one hole and electron sheets with no open orbit. The Fermi surfaces produce many de Haas-van Alphen frequencies over the range of 7.5 x 10(5) to 2.5 x 10(7) Oe.
- 出版日期2013-3
