Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series

作者：Lee, Chie In^*; Lin, Yan Ting; Lin, Wei Cheng

来源：Microelectronics Reliability, 2016, 60: 20-24.

DOI：10.1016/j.microrel.2015.11.011

• Temperature
• SiGe HBT modeling
• Avalanche breakdown
• Linearity
• Volterra series

In this paper, linearity characteristic of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) at different temperatures in the avalanche regime is investigated by the Volterra approach incorporating with a physics-based breakdown network for the first time. Third-order intermodulation distortion (IMD3) decreases with increasing temperature in the impact ionization region due to lower nonlinear contributions from individual nonlinearity according to the Volterra analysis results. Calculated gain, output power, and efficiency of SiGe HBTs are in good agreement with measurement results in the avalanche region. This analysis with respect to temperature can benefit the reliability study of linearity for SiGe HBTs in the avalanche regime.

• 出版日期2016-5
• 单位中山大学