A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

作者：Kim Dong Young; Seok Ogyun^*; Park Himchan; Bahng Wook; Kim Hyoung Woo; Park Ki Cheol

来源：Solid-State Electronics, 2018, 140: 8-11.

DOI：10.1016/j.sse.2017.10.009

• SiC
• Trench
• Schottky
• SBD
• TSBS
• Poly-Si

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low workfunction material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

• 出版日期2018-2