An Effective Strategy to Construct Highly Efficient Deep-Blue Organic Light-Emitting Field-Effect Transistors

作者：Tang, Guoqiang; Li, Bijin; Lan, Jingbo^*; You, Jingsong^*

来源：Advanced Materials Interfaces, 2017, 4(17): 1700453.

DOI：10.1002/admi.201700453

• ambipolar charge transport
• high brightness
• high EQE
• hybridized local excited states
• light-emitting transistors

The fabrication of highly efficient deep-blue organic light-emitting field-effect transistors (OLEFETs) remains a challenge due to the large energy bandgap of deep-blue emitters. In this work, an effective strategy is developed by combining an ambipolar charge transport material with an efficient deep-blue fluorescent emitter that features the hybridized local and charge-transfer (HLCT) excited state character in a trilayer device architecture. The ambipolar nature of charge transport material endows the device with a relatively high hole-electron recombination efficiency, while the HLCT excited state character of the emitter offers the device a high singlet exciton yield. The device exhibits a maximum brightness of 710 cd m(-2) and a maximum external quantum efficiency (EQE) of 0.28%, which is the first example of deep-blue OLEFETs. Unlike conventional OLEFETs, the devices presented herein display high EQEs during almost the entire illumination. The EQE of device at the maximum brightness reaches 0.20%, which is the highest value among the reported blue OLEFETs. Moreover, the device exhibits an excellent color purity with a sharp emission peak at 445 nm, a narrow full-width at half-maximum of 58 nm, and a Commission Internationale de l'Eclairage coordinates of (0.15, 0.06) that is very close to the National Television System Committee standard blue (0.14, 0.08).

• 出版日期2017-9-8
• 单位四川大学