AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

作者：Lee K H^*; Chang P C; Chang S J; Su Y K; Yu C L

来源：Applied Physics Letters, 2010, 96(21): 212105.

DOI：10.1063/1.3421392

• aluminium compounds
• gallium compounds
• high electron mobility transistors
• III-V semiconductors
• indium compounds
• leakage currents
• polarisation
• semiconductor quantum wells
• wide band gap semiconductors

We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta(2)O(5) gate oxide.

• 出版日期2010-5-24