High Speed Switching in Quantum Dot/Ti-TiOx Nonvolatile Memory Device

作者：Kannan V; Kim Hyun Seok; Park Hyun Chang

来源：Electronic Materials Letters, 2016, 12(2): 323-327.

DOI：10.1007/s13391-015-5410-5

• quantum dot
• nanoparticles
• tunnelings

We report a Ti-TiOx/CdSe-ZnS core-shell quantum dot based bipolar nonvolatile resistive memory device. The device exhibits an ON/OFF ratio of 100 and is reproducible. The memory device showed good retention characteristics under stress and excellent stability even after 100,000 cycles of switching operation. The switching speed measured was around 15 ns. The devices are solution processed at room temperature in ambient atmosphere. The operating mechanism is discussed based on charge trapping in quantum dots resulting in the Coulomb blockade effect with a ZnS shell layer and metal-oxide layer acting as the barrier to confine the trapped charges. The proposed mechanism is validated by a three terminal device designed exclusively for this purpose.

• 出版日期2016-3