Dual-gate low-voltage organic transistor for pressure sensing

作者：Tsuji, Yushi; Sakai, Heisuke^*; Feng, Linrun; Guo, Xiaojun; Murata, Hideyuki

来源：Applied Physics Express, 2017, 10(2): 021601.

DOI：10.7567/APEX.10.021601

• FIELD-EFFECT TRANSISTORS
• THIN-FILM-TRANSISTOR
• SENSOR MATRIX
• ARRAY
• SENSITIVITY
• SUBSTRATE
• SKIN

We simultaneously achieved low-voltage operation (-5 V) and large drain current (I-D) modulation in a dual-gate organic pressure sensor in which a piezoelectric layer was stacked on a low-voltage organic field-effect transistor (OFET). During testing, ID changed from 3.9 x 10(-9) to 2.5 x 10(-11)A when a 300 kPa pressure load was applied, and ID clearly responded to the pressure load and release. An endurance cycle test of the device was performed using a pressure load of 100 kPa, and the ID modulation was consistently reproduced throughout the test.

• 出版日期2017-2
• 单位上海交通大学