An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

作者：Han Xiao Yan^*; Geng Xin Hua; Hou Guo Fu; Zhang Xiao Dan; Li Gui Jun; Yuan Yu Jie; Wei Chang Chun; Sun Jian; Zhang De Kun; Zhao Ying

来源：Acta Physica Sinica, 2009, 58(2): 1344-1347.

• high rate growth
• microcrystalline silicon thin films
• electron temperature

The growth process of microcrystalline silicon thin films deposited at high growth rate was monitored online by optical emission spectroscopy. The properties of the material were studied by Raman and FTIR spectroscopy. The results indicated that the I([siH)center dot(])/I([H beta)center dot(]) ratio decreased during the process, particularly at low total gas flows, which was consistent with the Raman results. The I([H beta)center dot(])/I([H alpha)center dot(]) ratio detected after the plasma glowed for 5 minutes showed that the electronic temperature first decreased then increased with the increasing F(total). The FTIR spectra showed that the microstructure defect fraction R first decreased then increased with increasing F(total). This means that the electronic temperature in hydrogen plasma plays an important role in determining the properties of the microcrystalline silicon thin films.

• 出版日期2009-2
• 单位南开大学