A rational strategy for improving air-stability of OFETs via electronic tuning of substituents of benzene-fused bis(tetrathiafulvalene)

作者：Lei Wenwei; Liu Yucun; Bai Jinfeng; Dai Yanfeng; Kan Yuhe; Chen Tie^*; Yin Bingzhu

来源：Tetrahedron, 2015, 71(34): 5465-5471.

DOI：10.1016/j.tet.2015.06.082

• bis(Tetrathiafulvalene)
• p-Type organic semiconductor
• OFET
• Hole mobility
• Thin film transistor

To improve the air-stability of OFETs, several strong electron-withdrawing groups were introduced to both terminals of the benzene-fused bis (tetrathiafulvalene). This strategy indeed brought many useful changes, such as HOMO energies level, packing structure. Their oxidation potentials determined by cyclic voltammetry were shifted cathodically by more than 0.20 eV compared with the alkylthio group substituted analogues. Their solution-processed field-effect transistors showed improved p-type organic semiconductor characteristics. In the experimental study, the best performing device exhibited a hole mobility up to 0.057 cm(2) V-1 s(-1) under ambient conditions.

• 出版日期2015-8-26
• 单位延边大学; 淮阴师范学院