A New Short-Channel-Effect-Degraded Subthreshold Behavior Model for Double-Fin Multichannel FETs (DFMcFETs)

作者：Chiang Te Kuang^*

来源：IEEE Transactions on Nanotechnology, 2017, 16(1): 16-22.

DOI：10.1109/TNANO.2016.2622246

• double-Fin multi-channel FETs (DFMcFET)
• FinFET
• Quasi-3-D scaling equation
• scaling length
• short-channel effects (SCEs)
• subthreshold behavior
• subthreshold swing roll-up
• threshold voltage roll-off

On the basis of the quasi-three-dimensional scaling equation and minimum bottom-central potential, a new shortchannel- effect-degraded subthreshold behavior model for doubleFin multichannel FET (DFMcFET) is presented. It is shown that the deep trench of the DFMcFET is superior to the shallow one in respect of suppressing short-channel effects (SCEs) and reducing the threshold voltage roll-off and subthreshold roll-up. Meanwhile, the wide trench and thin gate oxide are required to resist SCEs and reduce the subthreshold behavior degradation as the channel length is further decreased. In comparison to the counterpart of conventional FinFET, DFMcFET not only provides the more conducting channel, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off Delta V-TH and subthreshold swing roll-up Delta SS can be well controlled by the scaling theory. The allowable minimum channel length can be uniquely determined according to the criterion of the scaling factor. With its computational efficiency and simple form, the model can be easily used for the circuit application of the DFMcFET.

• 出版日期2017-1