A New Theoretical Insight Into ZnO NWs Memristive Behavior

作者：Raffone Federico^*; Risplendi Francesca; Cicero Giancarlo

来源：Nano Letters, 2016, 16(4): 2543-2547.

DOI：10.1021/acs.nanolett.6b00085

• Nanowires
• RRAM
• memristor
• ZnO
• density functional theory (DFT)
• doping

Resistive switching memory operation is generally described in terms of formation and rupture of a conductive filament connecting two metal electrodes. Although this model was reported for several device types, its applicability is not guaranteed to all of them. On the basis of density functional theory calculations, we propose a novel switching mechanism suitable to nanowire-based resistive switching memories. For thick devices in particular, the current is highly unlikely to flow through a metallic filament connecting the electrodes. We demonstrate that in the case of ZnO nanowires metal adatoms, spread on the nanowire surface, locally dope the insulating oxide allowing surface conductance even for small metal concentrations.

• 出版日期2016-4