科研之友
微信
新浪微博
Facebook
分享链接
摘要
A novel double-gate (DG) junction field effect transistor (JFET) with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.
- 出版日期2008-2
- 单位北京大学
