Aluminum-doped zinc oxide electrode for robust (Pb,La)(Zr,Ti)O-3 capacitors: effect of oxide insulator encapsulation and oxide buffer layer

作者：Takada Yoko^*; Tsuji Toru; Okamoto Naoki; Saito Takeyasu; Kondo Kazuo; Yoshimura Takeshi; Fujimura Norifumi; Higuchi Koji; Kitajima Akira; Oshima Akihiro

来源：Journal of Materials Science: Materials in Electronics , 2014, 25(5): 2155-2161.

DOI：10.1007/s10854-014-1853-y

Conductive aluminum-doped zinc oxide (AZO) was deposited by pulsed laser deposition as top electrodes for chemical solution deposition derived lanthanum modified lead zirconate titanate (PLZT) capacitors. Compared with PLZT capacitors with Pt top electrodes (Pt/PLZT/Pt), PLZT capacitors with AZO as top electrodes (AZO/PLZT/Pt) showed improved fatigue endurance after cycles of 200 kV/cm (10 V) were applied with a 100 mu s pulse width at 1 ms intervals. By using a combination of AZO as the top electrode and as a thin buffer layer (10 nm) under PLZT thin films (AZO/PLZT/AZO/Pt), fatigue behavior was also improved compared with the case without an AZO buffer layer. The addition of either an Al2O3 or HfO2 encapsulation layer increased the remnant polarization ratio of PLZT capacitors (after annealing at 200 A degrees C, 1 Torr, 3 % hydrogen atmosphere) to 0.80 and 0.57, respectively, comparing with 0.52 without an encapsulation layer.

• 出版日期2014-5