科研之友
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摘要
This article describes the design and characterization of a wideband, 40% bandwidth microwave one port reflection amplifier.Experimental and simulation results are presented. The one port reflection amplifier uses a silicon bipolar transistor and demonstrates a return gain of better than 10 dB from 8 to 11.5 GHz. The gain of the refection amplifier can be easily DC modulated. In addition, a pair of reflection amplifiers is used to create a wideband bidirectional amplifier.
- 出版日期2012-3
