摘要
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that I-ds and V-th calculated by 2D current model achieve a better accuracy than Surf model
- 出版日期2008
- 单位北京大学