An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs

作者:Zhao Yu Ning*; Du Gang; Kang Jin Feng; Liu Xiao Yan; Han Ruqi
来源:International Conference on Simulation of Semiconductor Processes and Devices, 2008-09-09 to 2008-09-11.

摘要

In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that I-ds and V-th calculated by 2D current model achieve a better accuracy than Surf model