Normally-off vertical-type mesa-gate GaN MOSFET

作者：Won Chul Ho^*; Kim Ki Won; Kim Dong Seok; Kang Hee Sung; Im Ki Sik; Jo Young Woo; Kim Do Kywn; Kim Ryun Hwi; Lee Jung Hee

来源：Electronics Letters, 2014, 50(23): 1749-1750.

DOI：10.1049/el.2014.1692

A vertical-type mesa-gate GaN metal-oxide semiconductor field-effect transistor (MOSFET) has been fabricated. The mesa-gate structure can be easily achieved by a single deep etch to the n(+)-GaN which is the drain of the device, whereas the trench-gate structure, the commonly used structure for the vertical-type MOSFETs, requires an additional etching process to define the gate region. The mesa-gate GaN MOSFET exhibited a normally-off operation with the threshold voltage of 3 V, a normalised drain current of similar to 55 mA/mm and a high on/off current ratio of 10(8).

• 出版日期2014-11-6