Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

作者：Zuo Daniel^*; Liu Runyu; Wasserman Daniel; Mabon James; He Zhao Yu; Liu Shi; Zhang Yong Hang; Kadlec Emil A; Olson Benjamin V; Shaner Eric A

来源：Applied Physics Letters, 2015, 106(7): 071107.

DOI：10.1063/1.4913312

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 x 10(-2) cm(2)/s. We also report on the device's optical response characteristics at 78 K.

• 出版日期2015-2-16