A link between noise parameters and light exposure in GaAs pHEMT's

作者：Caddemi Alina; Crupi Giovanni^*; Salvo Giuseppe

来源：Solid-State Electronics, 2015, 105: 16-20.

DOI：10.1016/j.sse.2014.11.021

• GaAs HEMT
• Light exposure
• Microwave measurements
• Noise parameters

This work presents an experimental investigation and relevant discussion of the link existing between noise parameters and light exposure of GaAs pseudomorphic HEMT's at microwave frequencies. A 100 pm gate width AlGaAs/InGaAs/GaAs heterostructure device has been illuminated with CW visible laser light (650 nm) and a systematic analysis has been performed by examining the device behavior under controlled bias current conditions. Significant effects have been brought to evidence in the 2-26 GHz noise parameters F-min, Gamma(opt) and R-n measured in the different conditions. A clear correlation has been found between the level of degradation of the noise parameter behavior and the light exposure.

• 出版日期2015-3