科研之友
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摘要
The results of investigation of isothermal currents and charge accumulation in In-MnGa2Se4-In sandwich structures are presented. The obtained data are analyzed on the basis of the theory of isothermal currents and the relay-race mechanism of charge transport. It is shown that the dark-current relaxation in MnGa2Se4 single crystals is associated with charge accumulation at deep levels due to injection from the cathode. The following parameters are determined: the contact capacitance C (k) = 2 x 10(-13) F, the charge-accumulation-layer thickness d (k) = 4 x 10(-6) cm, and the drift charge-carrier mobility mu(ch) = 3 x 10(-8) cm(2) V-1 s(-1) in MnGa2Se4 single crystals.
- 出版日期2013-5
