A comparative study on the direct deposition of mu c-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma

作者：Zhou, H. P.^*; Xu, M.; Xu, S.^*; Feng, Y. Y.; Xu, L. X.; Wei, D. Y.; Xiao, S. Q.

来源：Applied Surface Science, 2018, 433: 285-291.

DOI：10.1016/j.apsusc.2017.10.013

• Amorphous silicon
• Recrystallization
• High-density plasma
• Interface

Deep insight into the crystallization mechanism of amorphous silicon is of theoretical and technological significance for the preparation of high-quality microcrystalline/polycrystalline silicon. In this work, we intensively compare the present two plasma-involved routes, i.e., the direct deposition and recrystallization of precursor amorphous silicon (a-Si) films, to fabricate microcrystalline silicon. Both the directly deposited and recrystallized samples show multi-layered structures as revealed by electronic microscopy. High-density hydrogen plasma involved recrystallization process, which is mediated by the hydrogen diffusion into the deep region of the precursor a-Si film, displays significantly different nucleation configuration, interface properties, and crystallite shape. The underlying mechanisms are analyzed in combination with the interplay of high-density plasma and growing or treated surface.

• 出版日期2018-3-1
• 单位电子科技大学; 西南民族大学; 南阳理工学院; 江南大学