Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

作者：You Shuzhen^*; Decoutere Stefaan; Ngoc Duy Nguyen; Van Huylenbroeck Stefaan; Sibaja Hernandez Arturo; Venegas Rafael; Loo Roger; De Meyer Kristin

来源：Thin Solid Films, 2012, 520(8): 3345-3348.

DOI：10.1016/j.tsf.2011.10.079

• SiGe:C HBT
• Ge-spiked monoemitter
• Trisilane
• Low temperature chemical vapor deposition

In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.

• 出版日期2012-2-1
• 单位KU Leuven