Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET

作者：Kang Soo Cheol; Lim Donghwan; Lim Sung Kwan; Noh Jinwoo; Kim Seung Mo; Lee Sang Kyung; Choi Changhwan; Lee Byoung Hun^*

来源：Japanese Journal of Applied Physics, 2018, 57(4): 04FB02.

DOI：10.7567/JJAP.57.04FB02

This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation near a p/n(+) region was the primary degradation mechanism. However, strong recovery after a high-pressure hydrogen annealing and weak degradation at low temperature indicates that the degradation mechanism of TFET under the HCI stress is different from the high-energy carrier stress induced permanent defect generation mechanism observed in MOSFETs. Further study is necessary to identify the exact location and defect species causing TFET degradation; however, a significant difference is evident between the dominant reliability mechanism of TFET and MOSFET.

• 出版日期2018-4