Comparison of the electro-thermal constraints on SiC MOSFET and Si IGBT power modules in photovoltaic DC/AC inverters

作者：Dbeiss Mouhannad^*; Avenas Yvan; Zara Henri

来源：Microelectronics Reliability, 2017, 78: 65-71.

DOI：10.1016/j.microrel.2017.07.087

• Photovoltaic inverter
• SiC MOSFET
• IGBT
• Junction temperature
• Mission profiles
• Thermal model

This article presents a comparative study between SiC MOSFETs and Si IGBTs regarding changes in their junction temperature in a PV inverter application. The estimation of these variations is made by introducing the current mission profiles extracted from a photovoltaic plant over one year into a calculation tool. The latter is based on a losses model and a thermal model including a coupling between them. The calculation of the losses in SiC MOSFETs in the 3rd quadrant is detailed. The results are the mission profiles of the junction temperature of semiconductors, which allow for determining and comparing the thermal constraints in SiC MOSFET and Si IGBT power modules.

• 出版日期2017-11
• 单位中国地震局