1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

作者：Wang Taifang^*; Ma Jun; Matioli Elison^*

来源：IEEE Electron Device Letters, 2018, 39(7): 1038-1041.

DOI：10.1109/LED.2018.2842031

• GaN
• HEMT
• reverse conduction
• free-wheeling diode
• Schottky diode
• tri-gate
• tri-anode
• break-down
• leakage current

In this letter, we present high-performance reverse-conduction GaN-on-Si metal-oxide-semiconductor high-electron-mobility transistors (RC-MOSHEMTs) with integrated tri-anode freewheeling diodes. Tri-anode Schottky barrier diode presenting small turn-ON voltage (V-ON), ultra-low reverse leakage current, and high breakdown voltage (V-BR) was incorporated at portions of the drift region of AIGaN/GaN MOSHEMTs as freewheeling diodes. The tri-anode RC-MOSHEMTs exhibited outstanding reverse conduction performance with a small V-ON of 0.55 V, along with a high V-BR of 1150 V, state-of-the-art low ON-resistance (R-ON) of 8.83 Omega. mm, and high-power figure of-merit (FOM = V-BR(2)/R-ON,(SP)) of 1.32 GW/cm(2). These results reveal the potential of the tri-gate/tri-anode technology for future integrated power electronic devices.

• 出版日期2018-7