A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen

作者：Chowdhury M; Long B; Jha R; Devabhaktuni V^*

来源：Solid-State Electronics, 2012, 68: 1-3.

DOI：10.1016/j.sse.2011.11.025

• Capacitance-voltage profile
• Nickel oxide
• Non-volatile memory
• Resistive RAM
• Resistive switching

In this paper, we report the fundamental properties of NiOx based Resistive RAM (RRAM) devices with Al top electrode and Ni bottom electrode. The NiOx deposition was performed in a relatively high oxygen environment. The initial J-V curves in positive and negative bias indicated symmetric behavior in spite of a significant difference in the vacuum work functions of Al and Ni. The capacitance-voltage characterizations indicated NiOx to be a p-type semiconductor with acceptor doping density between 6 x 10(18) cm(-3) and 5 x 10(20) cm(-3). Switching behavior was observed after electroforming the devices. The devices failed after multiple switching cycles by switching into a relatively low conductive state. The mechanism of failure was attributed to the formation of Al2O3 due to a slow oxidation of Al electrodes with repeated cycles.

• 出版日期2012-2