Nanoscale surface and interface engineering: Why plasma-aided?

作者：Ostrikov K^*; Xu S; Huang S Y; Levchenko I

来源：Surface and Coatings Technology, 2008, 202(22-23): 5314-5318.

DOI：10.1016/j.surfcoat.2008.06.165

• PECVD
• Nanofilms
• Surface and interface properties
• Plasma sources
• p-n junction
• Solar cells

This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RE magnetron Sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highly-crystalline silicon nanofilms with engineered high-quality interfaces.

• 出版日期2008-8-30
• 单位南阳理工学院; CSIRO