Memristor Logic Operation Gate With Share Contact RRAM Cell

作者：Shen Wen Chao^*; Tseng Yuan Heng; Chih Y D; Lin Chrong Jung

来源：IEEE Electron Device Letters, 2011, 32(12): 1650-1652.

DOI：10.1109/LED.2011.2167313

• Contact resistive random access memory (CRRAM)
• latch
• logic gate

In this letter, we proposed a novel operation of a share contact resistive random access memory (CRRAM) structure to realize a nonvolatile latch (NV latch) with a single transistor. With a share CRRAM structure and sequential input operations, the NV latch as well as AND/OR functions have been successfully demonstrated. The new mixing approach of combining memory and logic in a single unit projects the possibility of new applications for VLSI circuits.

• 出版日期2011-12
• 单位中国科学院电工研究所; 清华大学