摘要

In this paper, we propose a new method of measuring parameters of features of relief nanostructures. The method is based on the dependence of the length of the control intervals between certain bend points on video signal curves on the effective diameter of an electron probe. These video signals are obtained in the secondary electron imaging mode of a scanning electron microscope. Variation of the effective diameter of the electron probe is achieved by changing the microscope focus. The above dependences can be approximated by linear functions for a number of relief nanostructures, including the pitch structures of single crystal silicon with various profiles of the relief features, resist masks, etc. For appropriate choice of control intervals, the use of a constant term in such linear functions enables one to determine the size of relief features.

  • 出版日期2014-4