Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

作者：Ortega J J^*; Ortiz Hernandez A A; Berumen Torres J; Escobar Galindo R; Mendez Garcia V H; Araiza J J

来源：Materials Letters, 2016, 181: 12-15.

DOI：10.1016/j.matlet.2016.06.005

• P-type zno
• Ag-n doping zno
• High hole concentration
• Co-sputtering

ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56 x 10(-3) szcm, Hall mobility of 23 cm(2)/Vs and a very high hole concentration of 3.17 x 10(19) cm(-3).

• 出版日期2016-10-15