Angular Effects on F+ Etching SiC: MD Study

作者：Chen Xu; Tian Shuping; He Pingni; Zhao Chengli; Sun Weizhong; Zhang Junyuan; Chen Feng; Gou Fujun^*

来源：Plasma Science and Technology, 2012, 14(12): 1102-1105.

DOI：10.1088/1009-0630/14/12/12

• molecular dynamics methods
• plasma etching
• SiC

Molecular dynamics (MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K. The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle. With the steady-state etching established, a Si-C-F reactive layer is formed. It is found that the etching yield of Si is greater than that of C. In the F-containing reaction layer, the SiF species is dominant with incident angles less than 30 degrees. For all incident angles, the CF species is dominant over CF2 and CF3.

• 出版日期2012-12
• 单位贵州大学; 四川大学