摘要

Observation and evaluation of lattice defects such as vacancy, dislocation and grain boundary are very important for understanding microstructure development during thermo-mechanical treatments. Electrical resistivity measurements are superior to electron microscopies in terms of obtaining average information on micro-and nano-structures including lattice defects. The purpose of this study is to quantify lattice defects and crystallographic features in cold rolled and annealed pure Ti by precise measurements of electrical resistivity. Electrical resistivities at 77 K (liquid nitrogen) and 300 K were measured in a cold rolled Ti sheet at angles of 0, 45, 90 degrees from the rolling direction (RD) by a direct current (DC) four-point method. The resistivity at 90 degrees from RD was slightly higher than that at 0 degrees. A characteristic texture was developed in the sheet; accumulation of (0001) pole was confirmed to appear at an elevation angle of about 40 degrees on the transverse plane. In Matthiessen's empirical relationship for the cold rolled specimens, strong anisotropy in resistivity could also be confirmed. The gradient alpha and the intercept beta values of the relationship might be employed as parameters to quantify the anisotropy of crystal structures and dislocation structures.

  • 出版日期2013

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