A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

作者：Cho Lan Chou^*; Lee Chihun; Hung Chao Ching; Liu Shen Luan

来源：IEEE Journal of Solid-State Circuits, 2009, 44(3): 775-783.

DOI：10.1109/JSSC.2008.2012326

• Burst-mode clock/data recovery
• gated voltage-controlled oscillator
• passive optical networks
• phase-locked loop

A 33.6-33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2(11)-1 PRBS. The measured bit error rate is less than 10(-8) for a 33.72 Gb/s, 2(7)-1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.

• 出版日期2009-3
• 单位中国科学院电工研究所