Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

作者：Richter M C; Mariot J M^*; Gafoor M A; Nicolai L; Heckmann O; Djukic U; Ndiaye W; Vobornik I; Fujii J; Barrett N; Feyer V; Schneider C M; Hricovini K

来源：Surface Science, 2016, 651: 147-153.

DOI：10.1016/j.susc.2016.03.032

• Indium arsenide
• Bismuth
• Chemical reactivity
• Circular pattern morphology
• PEEM
• ARPES

Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.

• 出版日期2016-9
• 单位中国地震局