Atomic Interfacial Structures in Fe/GaAs Films

作者：Fleet L R; Kobayashi H; Ohno Y; Hirohata A^*

来源：IEEE Transactions on Magnetics, 2011, 47(10): 2756-2759.

DOI：10.1109/TMAG.2011.2156388

• Fe
• GaAs and Schottky barrier
• spin-polarized injection
• spintronics

We discuss the effect of the atomic interfacial structure on the Schottky barrier height in Fe/GaAs films. HRTEM image simulations, produced using the microscopy software JEMS, were used to predict the interfacial structure of Fe/GaAs thin films. Comparisons between experimental images, obtained using a JEOL FS2200 microscope, and the image simulations show the interfaces to contain various structures. This leads to regions with different barrier properties giving a distribution of barrier heights. This would create preferential regions for tunnelling across the film which would dominate device characteristics.

• 出版日期2011-10