An Organic-Based Diode-Memory Device With Rectifying Property for Crossbar Memory Array Applications

作者:Teo Eric Yeow Hwee*; Zhang Chunfu; Lim Siew Lay; Kang En Tang; Chan Daniel S H; Zhu Chunxiang
来源:IEEE Electron Device Letters, 2009, 30(5): 487-489.
DOI:10.1109/LED.2009.2017387

摘要

An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 10(6) and a high rectification ratio of 10(3). The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array.

  • 出版日期2009-5