Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire

作者：Klangtakai Pawinee^*; Sanorpim Sakuntam; Karlsson Fredrik; Holtz Per Olof; Pimanpang Samuk; Onabe Kentaro

来源：Physica Status Solidi A-Applications and Materials Science, 2014, 211(8): 1740-1744.

DOI：10.1002/pssa.201330543

• GaAs
• InGaAsN
• MOVPE
• photoluminescence
• quantum wires

The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I(0) to I-0. The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higher-energy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2).

• 出版日期2014-8