Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes

作者：Sasaki Hideaki^*; Kobashi Yoshifumi; Nagai Takashi; Maeda Masafumi

来源：Advances in Materials Science and Engineering, 2013, 2013: 857196.

DOI：10.1155/2013/857196

Removal methods of impurity from metallurgical-grade silicon (Si) are intensively studied to produce solar-grade silicon (SoG-Si) with a smaller economical load and lower cost. Removal of phosphorus (P) has been an important issue because of difficulties in application of conventional metallurgical methods such as solidification refining. Because P evaporates preferentially from molten Si due to its high vapor pressure, electron beam(EB) melting has been applied to the purification of Si. The evaporation of impurity P from Si is considered based on previous thermodynamic investigations here, and several research reports on EB melting of Si are reviewed.

• 出版日期2013