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摘要
The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on p(+)/n(+) source and drain region. However these types of wiggling profile is only observed at the n(+) contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.
- 出版日期2013-12
