Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100K

作者：Vicentis Caparroz Luis Felipe; Mendes Bordallo Caio Cesar; Martino Joao Antonio; Simoen Eddy; Claeys Cor; Der Agopian Paula Ghedini

来源：Semiconductor Science and Technology, 2018, 33(6): 065003.

DOI：10.1088/1361-6641/aabab3

• strained devices
• proton radiation
• low temperature
• FinFETs

This paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA, transistor efficiency and the intrinsic gain voltage (A(v)) for 3 different channel widths. The p-channel devices showed a greater immunity to radiation than the n-channel ones, when considering the basic parameters thanks to the back conduction turn-off tendency, while from the analog parameters point of view, both transistor types presented a similar response to proton radiation at strong inversion.

• 出版日期2018-6
• 单位Univ Estadual Paulista