A 2.1 to 6 GHz Tunable-band LNA With Adaptive Frequency Responses by Transistor Size Scaling

作者：Wang Yu Hsiang^*; Lin Kuan Ting; Wang Tao; Chiu Hung Wei; Chen Hsiao Chin; Lu Shey Shi

来源：IEEE Microwave and Wireless Components Letters, 2010, 20(6): 346-348.

DOI：10.1109/LMWC.2010.2047527

• Band switching
• CMOS
• low noise amplifier (LNA)
• transistor size scaling
• wide band amplifier

A 2.1 to 6 GHz tunable-band LNA by using transistor-size scaling technique is realized in 90 nm CMOS technology, which adopts a scalable-size transistor mimicked by the parallel-connected transistors with binary weighted device sizes. In the 16 programmable bands located in the frequencies of interest, the S21 varies in the range from 15.1 to 16.9 dB, and the NF is from 2.16 to 2.81 dB. This tunable -band LNA occupies only 0.23 mm(2), which is readily compact compared with the prior arts of passive components switchable LNAs.

• 出版日期2010-6
• 单位中国科学院电工研究所