Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

作者：Kormondy Kristy J^*; Abel Stefan; Fallegger Florian; Popoff Youri; Ponath Patrick; Posadas Agham B; Sousa Marilyne; Caimi Daniele; Siegwart Heinz; Uccelli Emanuele; Czornomaz Lukas; Marchiori Chiara; Fompeyrine Jean; Demkov Alexander A

来源：Microelectronic Engineering, 2015, 147: 215-218.

DOI：10.1016/j.mee.2015.04.041

• BaTiO3
• Molecular beam epitaxy
• Ferroelectric oxides
• Pockels effect

High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electrooptic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O-2 rapid thermal anneal at 600 degrees C for 30 min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure.

• 出版日期2015-11-1