Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology

作者：Zhang Hangfang^*; Jiang Hui; Assis Thiago R; Ball Dennis R; Narasimham Balaji; Anvar Ali; Massengill Lloyd W; Bhuva Bharat L

来源：IEEE Transactions on Nuclear Science, 2017, 64(1): 491-496.

DOI：10.1109/TNS.2016.2637876

• Angular strike
• charge track
• cross-section
• FinFET
• flip-flops
• single-event upset
• TCAD

Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinFET technologies, the physical structure of a FinFET is very different from that of a planar transistor. As a result, deposited and collected charge at a node for angular incidences will be different from what has been published for planar technologies. 3D TCAD simulations and heavy-ion experiments were carried out to investigate the angular effects on flip-flop (FF) single-event upsets (SEU) at the 16-nm bulk FinFET technology. Results show different SEU cross-section trends for the FinFET technology compared to planar technologies. Results show increased upset probability and SEU cross-sections with increasing tilt angles, but those are reduced with increasing roll angles for low-LET heavy-ion incidence. The main reason for this behavior is posited to be variations in charge track length within active Si regions.

• 出版日期2017-1