Anisotropy and optical gain improvement in type-II In0.3Ga0.7As/GaAs0.4Sb0.6 nano-scale heterostructure under external uniaxial strain

作者：Singh A K; Riyaj Md; Anjum S G; Yadav Nisha; Rathi Amit; Siddiqui M J; Alvi P A^*

来源：Superlattices and Microstructures, 2016, 98: 406-415.

DOI：10.1016/j.spmi.2016.08.048

• Type-II QW structure
• Uniaxial strain
• Optical gain
• InGaAs
• GaAsSb

Alterations in optical transitions and distortions in wave symmetry in nano-scale QW (quantum well) heterostructures are seen due to external uniaxial strain under different polarizations. This paper reports the anisotropy phenomena and optical gain improvement realized in In0,3Ga0.7As/GaAs0.4Sb0.6 type-Il QW-heterostructure (well width = 20 angstrom) under uniaxial strain in the SWIR (short wave infra red) region. The detailed study of the band structure, wave functions associated with the charge carriers in the respective bands and optical gain under electromagnetic field perturbation is reported. The 6 x 6 diagonal (k) over right arrow center dot (p) over right arrow Hamiltonian matrix is evaluated and Luttinger-Kohn model is used for the band structure calculation. Optical gain spectrum in the QW-heterostructure under uniaxial strain along [110] for different polarizations of light is calculated. For a charge carrier injection of 5 x 10(12)/cm(2) the optical gain is similar to 1600/cm under input z-polarization, similar to 14500/cm under x polarization and similar to 15700/cm under y-polarization without external uniaxial strain applied. A significant improvement in optical gain is observed under uniaxial strain along [110] direction under different input polarizations. Keeping in views its utilization in optoelectronics due its very high optical gain in near-infra-red region in x- or y-polarization mode, such structure can be considered as a novel structure.

• 出版日期2016-10