Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation

作者：Wang Zhi Guang^*; Liu Cun Bao; Zang Hang; Wei Kong Fang; Yao Cun Feng

来源：Journal of the Korean Physical Society, 2009, 55(6): 2705-2707.

DOI：10.3938/jkps.55.2705

• Swift heavy-ion irradiation
• Ion implantation
• C-doped a-SiO2
• Phase change
• PL spectra

Amorphous SiO2 (a-SiO2) thin films were thermally grown on single-crystalline silicon. These a-SiO2/Si samples were first implanted (C-doped) with 100-keV carbon ion at room temperature (RT) at a dose of 5.0 x 10(17) C-ions/cm(2) and were then irradiated at RT by using 853 MeV Pb ions at closes of 5.0 x 10(11), 1.0 x 10(12), 2.0 x 10(12) and 5.0 x 10(12) Pb-ions/cm(2), respectively. The microstructures and the photoluminescence (PL) properties of these samples induced by Pb ions were investigated using fluorescence spectroscopy and transmission electron microscopy. We found that high-energy Pb-ion irradiation could induce the formation of a new phase and a change in the PL property of C-doped a-SiO2/Si samples. The relationship between the observed phenomena and the ion irradiation parameters is briefly discussed.

• 出版日期2009-12
• 单位中国科学院近代物理研究所