A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency C-V and I-V Measurements

作者：Zhang, Xizhen^*; Cheng, Chuanhui; Zhu, Huichao; Yu, Tao; Zhang, Daming; Chen, Baojiu

来源：IEEE Electron Device Letters, 2016, 37(10): 1328-1331.

DOI：10.1109/LED.2016.2604247

• MOS capacitor
• double-frequency correction
• five-element model
• interface layer
• parallel resistance
• series resistance

For a very thin dielectric MOS capacitor, the influence of the interface layer on MOS capacitance extraction is not negligible. We report a new correction method for a thin dielectric MOS capacitor based on the five-element model, which includes MOS capacitance, parallel resistance, series resistance, interface capacitance, and interface resistance. This method needs to combine double-frequency C-V and I-V measurement data. By comparing the impedance of the five-element model with that of the two-element model, we have five characteristic equations. From these equations, we deduce a five-degree equation and then provide accurate numerical solutions for all five elements. Furthermore, we successfully demonstrate an application to Al/ZrO2/IL/n-Si capacitor (IL: interface layer). After correction, the frequency dispersion and upturn (or roll-off) of MOS capacitances at accumulation disappear. This correction method is superior to other methods. All five parameters in the five-element model have physically reasonable values. The relative dielectric constant (er) and dielectric loss (tand) are also calculated. These results show the validity and self-consistency of this new correction method.

• 出版日期2016-10
• 单位吉林大学; 大连海事大学; 大连理工大学